K10A60W Datasheet – 600V, 9.7A, N-Ch, MOSFET, TK10A60W

Part Number: K10A60W, TK10A60W

Function: 600V, 9.7A, N-Channel MOSFET

Package: TO-220 Type, SC-67 Type

Manufacturer: Toshiba

Image

K10A60W MOSFET Toshiba

Description

This is 600V, 9.7A, Silicon N-Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source on-resistance : RDS (ON) = 0.327 Ω (typ.)
by used to Super Junction Structure : DTMOS

2. Easy to control Gate switching

3. Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)

 

K10A60W Pinout

K10A60W datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 600 V

2. Gate-source voltage: VGSS = ±30 V

3. Drain current (Continuous) : ID = 9.7 A

4. Drain current (Pulsed) : IDP = 38.8 A

5. Drain power dissipation (Tc = 25°C): PD = 30 W

6. Single pulse avalanche energy : EAS = 69 mJ

7. Avalanche current : IAR = 4.9 A

8. Drain reverse current (Continuous) : IDR = 9.7 A

9. Drain reverse current (Pulsed) : IDRP = 38.8 A

10. Channel temperature: Tch = 150 °C

11. Storage temperature range : Tstg = -55 to 150 °C

12. Isolation voltage (t = 1.0s) : VISO(RMS) = 2000 V

13. Mounting torque : TOR = 0.6 N・m

Applications:

1. Switching Voltage Regulators

K10A60W Datasheet


 

Related articles across the web