K1118 MOSFET – 600V, 6A, Transistor, Equivalent ( 2SK1118 )

Part Number: K1118, 2SK1118

Function: 600V, 6A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Images:K1118 pinout pdf


K1118 is 600V, 6A, Silicon N-Channel MOS filed effect transistor. An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.


1. Drain Current ID=6A@ TC=25℃

2. Drain Source Voltage- : VDSS= 600V(Min)

3. Fast Switching Speed

4. Minimum Lot-to-Lot variations for robust device performance and reliable operation


K1118 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Drain Power Dissipation: Pd = 6 A

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C



1. Designed for high voltage, high speed power switching applications such as switching regulators

2. Converters, solenoid and relay drivers.

K1118 PDF Datasheet