Part Number: K12A60D, K12A600, TK12A60D
Function: 600V, 12A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
This is 600V, 12A, Silicon N Channel MOSFET.
Features
1. Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 359 mJ
6. Avalanche curren : Iar = 12 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature: Tch = °C
9. Storage temperature: Tstg = +150 °C
Applications:
1. Switching Regulator
K12A60D Datasheet
