Part Number: K1358
Function: 9A, 900V, N-Channel MOSFET
Package: TO-3P, SC-65 Type
Manufacturer: Toshiba
Images :
Description
This is N-Channel Field Effect Transistor.
Features
1. Low Drain-Source ON Resistance : RDS(ON) = 1.1Ω(Typ.)
2. High Forward Transfer Admittance : | Yfs | = 4.0S (Typ.)
3. Low Leakage Current : IDSS= 300µA (Max.) @ VDS= 720V
4. Enhancement-Mode : Vth= 1.5 ~ 3.5V @ VDS= 10V, ID= 1mA
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-Source Voltage : VDSS = 900 V
2. Drain-Gate Voltage (RGS = 20kΩ ) : VDGR = 900 V
3. Gate-Source Voltage : VGSS = ± 30 V
4. Drain Current (DC) : ID = 9 A
5. Drain Power Dissipation(Tc = 25°C): PD = 150 W
6. Channel Temperature : T ch = 150°C
7. Storage Temperature Range : Tstg = -55 ~ 150°C
Applications
1. High Speed, High Current DC-DC Converter
2. Relay Drive and Motor Drive
Other data sheets are available within the file: 2SK1358
K1358 Datasheet PDF Download
