K2008 Datasheet – MOSFET, 250V, 20A, Transistor, TO-3PFM

Part Number: K2008

Function: 250V, 20A, N-Channel MOSFET, Transistor

Package: TO-3PFM Type

Manufacturer: Hitachi (Renesas Electronics)

Image and Pinouts:

K2008 datasheet

 

Description

This is 250V, Silicon N-Channel MOSFET.

Features

1. Low on-resistance

2. High speed switching

3. Low drive current

4. No Secondary Breakdown

5. Suitable for Switching regulator, DC – DC converter, Motor Control

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Channel dissipation: Pch = 60 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Application:

1. High speed power switching

 

Other data sheets are available within the file: 2SK2008

K2008 Datasheet PDF Download


K2008 pdf