K2607 PDF Datasheet – 800V, 9A, N-Ch, MOSFET – 2SK2607

This post explains for the N-Channel MOSFET.

The Part Number is K2607, 2SK2607.

The function of this semiconductor is 800V, 9A, MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :K2607 pdf pinout


K2607 is 800V, 9A, Silicon N Channel MOS Type Field Effect Transistor.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.



1. Low drain−source ON-resistance : RDS (ON) = 1.0 Ω (typ.)

2. High forward transfer admittance : |Yfs|= 7.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 640 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K2607 datasheet mosfet



1. Chopper Regulator

2. DC−DC Converter and Moter Drive


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9 A

4. Drain Power Dissipation: Pd = 150 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


K2607 PDF Datasheet