K2607 PDF Datasheet – 800V, 9A, N-Ch, MOSFET – 2SK2607

This post explains for the N-Channel MOSFET.

The Part Number is K2607, 2SK2607.

The function of this semiconductor is 800V, 9A, MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :K2607 pdf pinout

Description

K2607 is 800V, 9A, Silicon N Channel MOS Type Field Effect Transistor.

 

Features

1. Low drain−source ON-resistance : RDS (ON) = 1.0 Ω (typ.)

2. High forward transfer admittance : |Yfs|= 7.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 640 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K2607 datasheet mosfet

 

Applications:

1. Chopper Regulator

2. DC−DC Converter and Moter Drive

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9 A

4. Drain Power Dissipation: Pd = 150 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

K2607 PDF Datasheet

Toshiba
2SK2607
Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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