K2607 PDF Datasheet – 800V, 9A, N-Ch, MOSFET – 2SK2607

This post explains for the N-Channel MOSFET.

The Part Number is K2607, 2SK2607.

The function of this semiconductor is 800V, 9A, MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :K2607 pdf pinout

Description

K2607 is 800V, 9A, Silicon N Channel MOS Type Field Effect Transistor.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

 

Features

1. Low drain−source ON-resistance : RDS (ON) = 1.0 Ω (typ.)

2. High forward transfer admittance : |Yfs|= 7.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 640 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K2607 datasheet mosfet

 

Applications:

1. Chopper Regulator

2. DC−DC Converter and Moter Drive

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9 A

4. Drain Power Dissipation: Pd = 150 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

K2607 PDF Datasheet