K2929 Datasheet PDF – 60V, 25A, N-Ch, MOSFET

Part Number: K2929

Function: 25A, 60V, N Channel MOSFET

Package: TO-220AB Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K2929 datasheet

 

Description

This is Silicon N Channel MOSFET.

Features

1. Low on-resistance : RDS=0.026 Ωtyp.
2. High speed switching
3. 4V gate drive device can be driven from 5V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 25 A
4. Drain peak current : ID(pulse) = 100 A
5. Body-drain diode reverse drain current : IDR = 25 A
6. Avalanche current : IAP = 20 A
7. Avalanche energy : EAR = 34 mJ
8. Channel dissipation: Pch  = 50 W

Application

1. High Speed Power Switching

Other data sheets are available within the file: 2SK2929

K2929 Datasheet PDF Download


K2929 pdf