Part Number: K2962, 2SK2962
Function: 100V, 1A, MOSFET
Pakcage : TO-92 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
The K2962 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. It is commonly used as a switch in power electronics applications, where its low on-resistance and fast switching speed make it well-suited for high-efficiency power conversion systems. The 2SK2962 has a maximum drain-source voltage of 100V and a maximum drain current of 1A, making it suitable for high voltage, high current applications. Its small form factor and high power density make it a popular choice for compact power supplies, motor drives, and other power conversion systems.
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of power MOSFET that uses an N-channel as the conducting channel. MOSFETs are widely used in power electronics for various applications such as switching, amplification, and voltage regulation.
Features
1. 4-V gate drive
2. Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.)
3. High forward transfer admittance : |Yfs| = 1.2 S (typ.)
4. Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)
5. Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 1 A
4. Drain Power Dissipation: Pd = 0.9 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Chopper Regulator
2. DC−DC Converter and Motor Drive
