Part Number: K40H1203, IKW40N120H3
Function: 1200V, 40A, IGBT
Package: TO-247 Type
Manufacturer: Infineon
Images:
Description
K40H1203 is IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features
• very low VCEsat
• low EMI
• Very soft, fast recovery anti-parallel diode
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
Applications:
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
K40H1203 PDF Datasheet
