K40H1203 PDF – 1200V, 40A, IGBT – IKW40N120H3

Part Number: K40H1203, IKW40N120H3

Function: 1200V, 40A, IGBT

Package: TO-247 Type

Manufacturer: Infineon


K40H1203 pinout datasheet


K40H1203 is IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.


• very low VCEsat

• low EMI

• Very soft, fast recovery anti-parallel diode

• maximum junction temperature 175°C

• qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant


K40H1203 pdf igbt


• uninterruptible power supplies

• welding converters

• converters with high switching frequency

K40H1203 PDF Datasheet