Part Number: K2996
Function: 600V, 10A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
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Description
This is Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain−source ON resistance : RDS(ON) = 0.74 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 6.8 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
K2996 Transistor Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = 600 V
3. Drain current: ID = ± 10 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 252 mJ
6. Avalanche curren : Iar = 10 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
Applications
1. DC-DC Converter
2. Relay Drive and Motor Drive
Other data sheets are available within the file: 2SK2996
K2996 Datasheet PDF Download
