Part Number: K30A06J3A
Function: 60V, 30A, Silicon N Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
K30A06J3A is Silicon N Channel MOS Type Field Effect Transistor.
1. This indicates the maximum drain-source voltage (Vds) that the MOSFET can withstand. In this case, the MOSFET is designed to handle a maximum voltage of 60 volts.
2. This refers to the maximum drain current (Id) that the MOSFET can handle. It represents the maximum continuous current flowing from the drain to the source when the MOSFET is fully turned on and conducting.
N-channel MOSFETs are widely used in various electronic applications, particularly in power electronics and switching circuits. They are commonly used as electronic switches to control the flow of current in different electronic devices and systems.
Features:
1. Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.)
2. High forward transfer admittance: |Yfs| = 34 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
4. Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA
Absolute Maximum Ratings (Tc = 25°C)
1. Drain to source Voltage: VDSS = 60 V
2. Gate to source Voltage: VGSS = ± 20 V
3. Drain current: ID = 30 A
4. Drain Power Dissipation: Pd = 25 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
K30A06J3A PDF Datasheet
