Part Number: K3151
Function: 50A, 100V, Silicon N Channel MOSFET
Package: TO-3P Type
Manufacturer: Hitachi ( Renesas Electronics )
Image and Pinouts:
Description
This is 100V, 50A, N-Channel MOSFET.
Features
1. Low on-resistance : RDS (on)= 11.5 mΩtyp.
2. High speed switching
3. 4 V gate drive device can be driven from 5 V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
4. Body-drain diode reverse drain current : IDR = 50 A
5. Avalanche current : IAP = 50 A
6. Avalanche energy : EAR = 250 mJ
7. Channel dissipation: Pch = 125 W
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
Applications
1. High Speed Power Switching
Other data sheets are available within the file: 2SK3151
K3151 Datasheet PDF Download
