This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K3565, 2SK3565
Function: N-channel MOSFET ( 900V, 5A, 45W )
Package: TO-220 Type
Manufacturer: Toshiba
Image
Description
This is Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain-source ON resistance: RDS (ON)= 2.0 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 4.5 S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 720 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Applications: Switching Regulator
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 900 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : EAS = 595 mJ
6. Avalanche current : IAR = 5 A
7. Repetitive avalanche energy : EAR = 4.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C
