This is a kind of MOSFET.
Part Number: K3567, 2SK3567
Function: 600V, 3.5A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
Image:
Description
This is Silicon N Channel MOS Type Field Effect Transistor.
Features ;
1. Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 2.5 S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 600 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 35 W
5. Single pulse avalanche energy : EAS = 201 mJ
6. Avalanche current : IAR = 3.5 A
7. Repetitive avalanche energy : EAR = 3.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C
Applications
1. Switching Regulator
Other data sheets are available within the file: 2SK3567
K3567 Datasheet PDF Download
