K9LBG08U0D Datasheet PDF – 32G-bit NAND Flash Memory

Part Number: K9LBG08U0D

Function: 32G-bit NAND Flash Memory

Package: TSOP 48 Pin type

Manufacturer: Samsung


K9LBG08U0D datasheet



Offered in 4G x 8bit the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1744M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800μs on the 4314-byte page and an erase operation can be performed in typical 1.5ms on a (512K+27.25K)byte block.

Data in the data register can be read out at 30ns(K9XDG08U5D: 50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition where required and internal verification and margining of data.


1. Voltage Supply
– 3.3V Device : 2.7V ~ 3.6V

2. Organization
– Memory Cell Array : (2G + 109M) x 8bit
– Data Register : (4K + 218) x 8bit

3. Automatic Program and Erase
– Page Program : (4K + 218)Byte
– Block Erase : (512K + 27.25K)Byte

4. Page Read Operation
– Page Size : (4K + 218)Byte
– Random Read : 60μs(Max.)
– Serial Access : 30ns(Min.)
*K9XDG08U5D: 50ns(Min.)

5. Memory Cell : 2bit / Memory Cell

6. Fast Write Cycle Time
– Program time : 800μs(Typ.)
– Block Erase Time : 1.5ms(Typ.)

Other data sheets are available within the file:



K9LBG08U0D Datasheet PDF Download

K9LBG08U0D pdf