Part Number: MDF10N65B
Function: 650V, 10A, N-Channel MOSFET
Package: TO-220F type
Manufacturer: MagnaChip
Images:
Description
The MDF10N65B MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDF10N65B is suitable device for SMPS, high Speed switching and general purpose applications.
Features
1. VDS = 650V
2. ID = 10.0A @ VGS = 10V
3. RDS(ON) ≤ 1.0Ω @ VGS = 10V
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 650 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 10 A
4. Total Power Dissipation: Pd = 47.7 W
5. Avalanche energy: Ear = 15 mJ
6. Channel temperature: Tch = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Power Supply
2. PFC
3. High Current, High Speed Switching
MDF10N65B PDF Datasheet
