Part Number: MDF4N60
Function: 600V, 4.6A, N-Channel MOSFET
Package: TO-220, TO-220F Type
Manufacturer: MagnaChip
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Description
MDF4N60 is N-channel MOSFET 600V, 4.6A, 2.0Ω. These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.
An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
Features
1. VDS = 600V
2. ID = 4.6A
3. RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V
Applications:
1. Power Supply
2. PFC
3. High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source Voltage: VDSS = 600 V
2. Gate to source Voltage: VGSS = ± 30 V
3. Drain current: ID = 4.6 A
4. Drain Power Dissipation: Pd = 34.7 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
MDF4N60 PDF Datasheet
