K11A60D PDF – 600V, MOSFET, Transistor (TK11A60D)

Part Number: K11A60D, TK11A60D

Function: 600V, 11A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor


K11A60D pdf


The K11A60D is Silicon N Channel MOS Type Field Effect Transistor.

An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.

One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.


1. Switching Regulator


• Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 11 44 45 396 11 4.5 150 −55 to 150 Unit V V A W mJ A mJ °C °C

1: Gate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Internal Connection Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit °C/W °C/W 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.73 mH, RG = 25 Ω, IAR = 11 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 1 2010-08-12 Electrical Characteristics (Ta = 25°C) TK11A60D Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol Test Condition Min Typ.[…]

K11A60D transistor toshiba

K11A60D Datasheet