This is one of the types of MOSFETs and is a kind of transistor.
Part Number: MDF7N60B
Funciton: N-Channel MOSFET, 600V, 7.0A, 1.15Ω
Package: TO-220F Type
Manufacturer: Magnachip
See the preview image and the PDF file for more information.
Image
Description
MDF7N60B is a high-voltage N-Channel MOSFET fabricated using Magnachip’s advanced MOSFET process technology. These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. This device is optimized for efficiency and reliability in power conversion systems operating from high-voltage DC buses.
MDF7N60B Pinout
Features
1. N-Channel MOSFET for high-voltage switching
2. Drain-Source Voltage: 600 V (660 V @ Tjmax)
3. ID= 7.0A @ VGS= 10V
4. RDS(ON)≤ 1.15Ω @ VGS= 10V
5. Designed for SMPS and PFC applications
Absolute Maximum Ratings (Ta = 25 °C)
| Drain-Source Voltage | VDSS | 600 | V |
| Drain-Source Voltage @ Tjmax | VDSS@Tjmax | 660 | V |
| Gate-Source Voltage | VGSS | ±30 | V |
| Continuous Drain Current (TC = 25°C) | ID | 7.0* | A |
| Continuous Drain Current (TC = 100°C) | ID | 4.4* | A |
| Pulsed Drain Current | IDM | 28* | A |
| Power Dissipation (TC = 25°C) | PD | 42 | W |
| Repetitive Avalanche Energy | EAR | 13.1 | mJ |
| Single Pulse Avalanche Energy | EAS | 220 | mJ |
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns |
| Junction / Storage Temperature | TJ, TSTG | -55 to +150 | °C |
Applications
1. Power Supply
2. Power Factor Correction (PFC) circuits
3. High Current, High Speed Switching
MDF7N60B Datasheet
