Part Number: MMBT5550L
Function: 180V, High Voltage NPN Silicon Transistor
Package: SOT-23 ( TO-236 ) Type
Manufacturer: ON Semiconductor
Image and Pinouts:
Description
This is 180V, Silicon NPN Transistor.
Features
1. AEC−Q101 Qualified and PPAP Capable
2. S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
3. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 160 V
2. Collector to Emitter Voltage: Vceo = 180 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 600 mA
5. Collector Dissipation : Pc = 225 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
MMBT5550L Datasheet PDF Download
Other data sheets are available within the file:
MMBT5550, MMBT5550LT1G, MMBT5551L, MMBT5551LT1G, SMMBT5551L