MMBT5550L Datasheet PDF – 180V, NPN Transistor

Part Number: MMBT5550L

Function: 180V, High Voltage NPN Silicon Transistor

Package: SOT-23 ( TO-236 ) Type

Manufacturer: ON Semiconductor

Image and Pinouts:

MMBT5550L datasheet



This is 180V, Silicon NPN Transistor.


1. AEC−Q101 Qualified and PPAP Capable

2. S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

3. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 160 V

2. Collector to Emitter Voltage: Vceo = 180 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 600 mA

5. Collector Dissipation : Pc = 225 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

MMBT5550L Datasheet PDF Download

MMBT5550L pdf

Other data sheets are available within the file:

MMBT5550, MMBT5550LT1G, MMBT5551L, MMBT5551LT1G, SMMBT5551L