MMZ09312BT1 Datasheet – Class AB InGaP HBT Amplifier

Part Number: MMZ09312BT1

Function: Heterojunction Bipolar Transistor Technology (InGaP HBT)

Package: QFN 3×3, 12 Pin Type

Manufacturer: Freescale Semiconductor

Image and Pinouts:

MMZ09312BT1 datasheet



The MMZ09312B is a 2–stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage infemtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost–effective, surface mount QFN plastic package.


MMZ09312BT1 Datasheet PDF Download

MMZ09312BT1 pdf

Other data sheets are available within the file: MMZ09312BT