This post explains for the MOSFET.
The Part Number is PA110BDA.
The Package is TO-252 Type
The function of this transistor is 100V, 15A, Silicon N-channel MOSFET.
Manufacturer: UNIKC Semiconductor
Image
Description
The PA110BDA is Silicon N Channel MOS Type Field Effect Transistor.
An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.
One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.
Absolute Maximum Ratings (Tc = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 15 A
4. Drain power dissipation : PD =50 W
5. Single pulse avalanche energy : Eas = 14.8 mJ
6. Avalanche current : Iar = 5.4 A
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C
Pinout
PA110BDA PDF Datasheet
Posts related to ‘ MOSFET ‘
| Part number | Description |
| CM2N65F | CM2N65F – POWER MOSFET |
| K10A60DR | 600V, N-Channel MOSFET |
| J377 | P-ch MOSFET, Vdss = -60V – Toshiba |
| SUD50N06-36 | N-ch, 60V, MOSFET ( TO-252) |
| 85U03GH | BVdss=30V, N-Ch MOSFET – APEC |
| IRF1730G | IRF1730G – Power MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A) |
| P9NK60Z | N-Ch, 600V, 7A, Power MOSFET – ST |
| IRFZ24N | 55V, 17A, MOSFET (Transistor) |
| P0603BDG | P0603BDG – N-Channel Enhancement Mode MOSFET |
| CS20N50 | CS20N50 – Silicon N-Channel Power MOSFET |
