NCE55P30 Datasheet – Vds = -55V, P-ch Power MOSFET – NCE

Part Number: NCE55P30

Function : P-Channel Enhancement Mode Power MOSFET

Package: TO-220-3L Type

Manufacturer: NCE ( http://www.ncepower.com )

Image

NCE55P30 image

Description

The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Pinout

NCE55P30 datasheet pinout

General Features

1. VDS = -55V, ID = -30A
RDS(ON)<40mΩ@ VGS=-10V
2. High density cell design for ultra low Rdson
3. Fully characterized avalanche voltage and current
4. Good stability and uniformity with high E AS
5. Excellent package for good heat dissipation

Application

1. Power switching application
2. Hard switched and high frequency circuits
3. Uninterruptible power supply

NCE55P30 Datasheet


 

VBsemi
NCE55P30-VB
P—channelchannel, -60V, -50A, Rds(on), 19MΩ@10V, 26MΩ@4.5V, 20VGS(±V);-1.96VTH(V) ENCAPSULATION:TO220
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