Part Number: P6NA60FI
Function: 600V, 3.9A, N-Channel MOSFET
Package: TO-220, ISOWATT220 Type
Manufacturer: STMicroelectronics
Pinouts:
Description
THIS IS 600V, 3.9A, N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR.
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance.
Absolute Maximum Ratings
1. Drain-source Voltage (VGS = 0) : VDS = 600 V
2. Drain-gate Voltage (RGS = 20 kW): VDGR = 600 V
3. Gate-source Voltage : VGS = ± 30 V
4. Drain Current (continuous) at Tc = 25°C : ID = 3.9 A
5. Drain Current (continuous) at Tc = 100 °C : ID = 2.6 A
6. Total Dissipation at Tc = 25 °C : Ptot = 45 W
Applications:
1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SWITCH MODE POWERSUPPLIES (SMPS)
3. DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
Other data sheets are available within the file: P6NA60, TP6NA60, STP6NA60FI
P6NA60FI Datasheet PDF Download
