RA13H8891MA Datasheet PDF – 3W, RF MOSFET Amplifier

Part Number: RA13H8891MA

Function: 3W, Silicon RF Power MOSFET Modules

Manufacturer: Mitsubishi Electric

Image and Pinouts:

RA13H8891MA datasheet



The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to 915-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.


1. Broadband Frequency Range: 889-915MHz

2. Low-Power Control Current IGG=1mA (typ) at VGG=5V

3. Module Size: 66 x 21 x 9.88 mm


RA13H8891MA Datasheet PDF Download

RA13H8891MA pdf

Other data sheets are available within the file: RA13H8891, RA13H8891MA101