2SK3061 PDF Datasheet – 60V, 70A, MOSFET, Transistor – Renesas

Part Number: 2SK3061


Package: Isolated TO-220 Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK3061 datasheet



The 2SK3061 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Renesas Electronics. It is commonly used as a switch in power electronics applications, where its low on-resistance and fast switching speed make it well-suited for high-efficiency power conversion systems.

The 2SK3061 has a maximum drain-source voltage of 600V and a maximum drain current of 20A,
making it suitable for high voltage, high current applications.

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.


1. Low on-state resistance :

(1) RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A)

(2) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A)

2. Low Ciss: Ciss= 5200 pF TYP.

3. Built-in gate protection diode

4. Isolated TO-220 package


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 70 A

4. Total Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


2SK3061 Datasheet PDF Download

2SK3061 pdf

Other data sheets are available within the file: K3061