Part Number: RJH30
Function: 360V, 30A, N-Channel IGBT
Package: TO-220FL Type
Manufacturer: Renesas Electronics
This is 360V, 30A, Silicon N Channel IGBT. The IGBT is insulated-gate bipolar transistor.
1. Trench gate and thin wafer technology (G6H-II series),
2. High speed switching: tr =80 ns typ., tf = 150 ns typ.,
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.
Absolute Maximum Ratings (Tc = 25°C)
1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 30 A
4. Collector peak current : ic(peak) = 200 A
5. Collector dissipation : PC = 20 W
6. Channel temperature: Tch = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C
1. High speed power switching
Other data sheets are available within the file: RJH-30, RJH30H1DPP-M0