RJH60F7ADPK Datasheet PDF – 600V, 90A, IGBT – Renesas

Part Number: RJH60F7ADPK

Function: 600V, N-Channel IGBT

Package: TO-3P Type

Manufacturer: Renesas Electronics

Image and Pinouts:

RJH60F7ADPK datasheet

 

Description

This is 600V, Silicon N-Channel IGBT.

Features

1. Low collector to emitter saturation voltage

2. Built in fast recovery diode in one package

3. Trench gate and thin wafer technology

 

components

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 90 A

4. Collector dissipation : Pc = 328.9 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Speed Power Switching

RJH60F7ADPK Datasheet PDF Download


RJH60F7ADPK pdf

Other data sheets are available within the file: RJH60F7A, RJH60F7ADPK-00-T0