Part Number: RJH60F7ADPK
Function: 600V, N-Channel IGBT
Package: TO-3P Type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description
This is 600V, Silicon N-Channel IGBT.
Features
1. Low collector to emitter saturation voltage
2. Built in fast recovery diode in one package
3. Trench gate and thin wafer technology
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 90 A
4. Collector dissipation : Pc = 328.9 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Speed Power Switching
RJH60F7ADPK Datasheet PDF Download
Other data sheets are available within the file: RJH60F7A, RJH60F7ADPK-00-T0