RJP6065DPM Datasheet PDF – 630V, 40A, N-Channel IGBT

Part Number: RJP6065DPM

Function: 630V, 40A, N-Channel IGBT

Package: TO-3PFM Type

Manufacturer: Renesas Electronics

Image:

RJP6065DPM datasheet

 

Description

This is 630V, Silicon N-Channel IGBT.

Features

1. Low collector to emitter saturation voltage :

VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)

2. Gate to emitter voltage rating : ± 30 V

3. Pb-free lead plating and chip bonding

Image and Pinouts:

components

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 630 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 40 A

4. Collector dissipation : Pc = 50 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

RJP6065DPM Datasheet PDF Download


RJP6065DPM pdf

Other data sheets are available within the file: RJP6065, RJP-6065