Part Number: RJP63K2DPK-M0
Function: 630V, 35A, N-Channel IGBT
Package: TO-3PSG Type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description
This is 630V, Silicon N Channel IGBT.
Features
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4. Low leak current: ICES= 1 μA max
Absolute maximum ratings ( Ta=25°C )
1. Collector to Emitter voltage : VCES = 630 V
2. Gate to Emitter voltage : VGES = ±30 V
3. Collector current : Ic = 35 A
4. Collector peak current : ic(peak) = 200 A
5. Collector dissipation : PC = 60 W
RJP63K2DPK-M0 Datasheet PDF Download
Other data sheets are available within the file: RJP63K2DPK, RJP63K2
