Part Number: SSP7N60B
Function: 600V, 7A, N-channel MOSFET
Package: TO-220, TO-220F Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description
This is 600V, 7A, N-channel MOSFET.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
1. 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
2. Low gate charge ( typical 38 nC)
3. Low Crss ( typical 23 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
7. TO-220F package isolation = 4.0kV
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 7 A
4. Power Dissipation: Pd = 147 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: 7N60B, SSS7N60B
SSP7N60B Datasheet PDF Download
