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MR4030 Datasheet – 900V, IGBT Module – Shindengen ( PDF )

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Part Number: MR4030

Function: 900V, IGBT, Partial Resonance Power Supply IC

Package: FTO-7P Type

Manufacturer: Shindengen Electric

Image:

MR4030 datasheet

Description

The MR4030, MR4000 series represents IC modules for SMPSes equipped with burst mode (standby mode) switching functionality for miniscule loads. Its partial resonance operation makes possible low noise and superior efficiency. It is ideal for a variety of power.

Features

1. High efficiency and low noise through partial resonance

2. Second-generation high-speed IGBT with 900-V resistance simplifies design for auto-sensing power supply input. (MR40XX series)

3. Burst mode helps reduce power consumption at micro-loads.

4. Onboard startup circuit eliminates the need for startup resistors.

5. Soft-drive circuit achieves low noise levels.

6. Overcurrent protection function (ton limit and primary current limit), overvoltage protection, and thermal shutdown function

7. Allow configuration of a power supply circuit with fewer external components.

8. Full-mold package facilitates insulation design.

Applications:

Televisions, displays, printers, video recorders, DVD, STB, refrigerators, and other appliances; various automated business machines

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Other data sheets are available within the file:

MR4010, MR4020, MR4040, MR4500

 

MR4030 Datasheet PDF Download


MR4030 pdf

G80N60UFD Datasheet PDF – 600V, Ultrafast IGBT – Fairchild

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Part Number: G80N60UFD

Function: Ultrafast IGBT ( Vces = 600V )

Package: TO-3P Type

Manufacturer: Fairchild Semiconductor

Image :

G80N60UFD image

 

Description

This is 600V, Ultrafast IGBT.

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and  switching losses.

The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

 

Pinouts:

G80N60UFD datasheet pinout

Features

1. High speed switching

2. Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A

3. High input impedance

4. CO-PAK, IGBT with FRD : trr = 50ns (typ.)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 80 A

4. Maximum Power Dissipation: Pd = 195 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G80N60UFD Datasheet PDF Download

G80N60UFD pdf


 

Other data sheets are available within the file:  G80N60, SGH80N60UFD

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