60N60 PDF Datasheet – 600V, 100A, IGBT, IXGN60N60 – IXYS

This post explains for the IGBT.

The Part Number is IXGN60N60, 60N60.

The function of this semiconductor is 600V, 100A, IGBT.

The package is SOT-227B Type

Manufacturer: IXYS Corporation

Preview images :60N60 pdf pinout

Description

60N60 is 600V, Insulated-gate bipolar transistor.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Features

1. International standard package SOT-227B

2. Aluminium nitride isolation – high power dissipation

3. Isolation voltage 3000 V~

4. Very high current, fast switching IGBT

5. Low VCE(sat) for minimum on-state conduction losses

6. MOS Gate turn-on drive simplicity

7. Low collector-to-case capacitance (< 50 pF)

8. Low package inductance (< 5 nH) – easy to drive and to protect

 

Advantages:

1. Easy to mount with 2 screws

2. Space savings

3. High power density

60N60 datasheet igbt

Applications:

1. AC motor speed control

2. DC servo and robot drives

3. DC choppers

4. Uninterruptible power supplies (UPS)

5. Switch-mode and resonant-mode power supplie

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60N60 PDF Datasheet

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FGL40N120AN PDF Datasheet – 1200V, 64A, IGBT – Fairchild

This post explains for the IGBT.

The Part Number is FGL40N120AN.

The function of this semiconductor is 1200V NPT IGBT.

The package is TO-264 Type

Manufacturer: Fairchild Semiconductor

Preview images :FGL40N120AN pdf pinout

Description

FGL40N120AN is 1200V, 64A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Employing NPT technology, ON Semiconductor’s AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

Features

1. High speed switching

2. Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A

3. High input impedance

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 25 V

3. Collector current : Ic = 64 A (Tc = 25°C)

4. Maximum Power Dissipation: Pd = 500 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

FGL40N120AN datasheet igbt

Applications:

1. Consumer

2. Motion-Industrial motor

3. Other Industrial

4. Uninterruptible Power Supply

 

FGL40N120AN PDF Datasheet