Part Number: GW45HF60WD, STGW45HF60WD

Function: 45A, 600V, Ultra fast IGBT

Package: TO-247 Type

Manufacturer: ST Microelectronics

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Description

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

GW45HF60WD is 45A, 600V, Ultra fast IGBT. The “HF” series is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy (Eoff) versus temperature. Suffix “W” denotes a subset of products tailored to high switching frequency operation over 100 kHz. Figure 1. Internal schematic diagram Table 1. Device summary Marking GW45HF60WD Package TO-247 Packaging Tube Order code STGW45HF60WD August 2009 Doc ID 15593 Rev 2 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

Features

1. Improved Eoff at elevated temperature

2. Low CRES / CIES ratio (no cross-conduction susceptibility)

3. Ultra fast soft recovery antiparallel diode

Applications:

1. Welding

2. High frequency converters

3. Power factor correction

 

GW45HF60WD PDF Datasheet

Part Number: G30N60HS

Function: 600V, 30A, High Speed IGBT

Package: TO-220-3,  TO-247-3 Type

Manufacturer: Infineon

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Description

A 600V IGBT (Insulated Gate Bipolar Transistor) is a type of power semiconductor device used for switching and amplifying electrical signals in various applications, particularly in power electronics and motor control systems.

IGBTs are widely used in industrial and commercial applications where high voltage and current levels are involved. They offer advantages such as fast switching speeds, high power handling capabilities, and low conduction losses. The combination of the voltage rating and IGBT technology allows for efficient power control and conversion in various systems.

Features :

• 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: – parallel switching capability – moderate Eoff increase with temperature – very tight parameter distribution PG-TO-220-3-1 • High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Package SGP30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1 SGW30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s VCE IC ICpuls – EAS VGE tSC Ptot Tj , Tstg Tj(tl) – 600 41 30 112 112 165 ±20 ±30 10 250 -55…+150 175 260 Unit V A mJ V µs W °C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Symbol Conditions RthJC RthJA PG-TO-220-3-1 PG-TO-247-3-21 Max. Value 0.5 62 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance  [ … ]

G30N60HS PDF Datasheet