igbt

H20R1203 PDF – 1200V, 20A, IGBT, Transistor

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This post explains for the IGBT H20R1203.

The IGBT is insulated-gate bipolar transistor.

The Part Number is IHW20N120R3

The packages is TO-247-3 pin type.

The function of this semiconductor is 1200V, 20A, IGBT.

Manufacturer: Infineon

Image

H20R1203 transistor

Description

H20R1203 is 1200V, 20A, IGBT. A reverse conducting IGBT (Insulated Gate Bipolar Transistor) with a monolithic body diode is a type of IGBT that incorporates a built-in or integrated diode within its structure. This diode, also known as a body diode or freewheeling diode, provides a low-loss path for current flow in the reverse direction when the IGBT is in the off state.

The IGBT is a power semiconductor device that combines the features of a MOSFET (voltage-controlled operation) and a bipolar transistor (low on-state voltage drop). It is commonly used in power electronics applications for high-power switching and amplification.

Reverse conducting IGBTs with monolithic body diodes are commonly used in various applications, including motor drives, power inverters, uninterruptible power supplies (UPS), and industrial power systems. They offer efficient and reliable switching performance while simplifying circuit design and reducing component count.

Features

• Powerful monolithic body diode with low forward voltage designed for soft commutation only

• TRENCHSTOPTM technology applications offers:

– very tight parameter distribution

– high ruggedness, temperature stable behavior

– low VCEsat

– easy parallel switching capability due to positive temperature coefficient in VCEsat

• Low EMI

• Qualified according to JESD-022 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

 

Marking H20R1203

H20R1203 pinout datasheet

Applications

1. Inductive cooking

2. Inverterized microwave ovens

3. Resonant converters

4. Soft switching applications

H20R1203 PDF Datasheet

K50H603 PDF – 600V, High Speed IGBT, Transistor

Posted on by pinout

This post explains for the IGBT, transistor.

The IGBT is insulated-gate bipolar transistor.

The Part Number is K50H603. Full Part Name is IKW50N60H3.

The function of this semiconductor is 600V, 50A, IGBT.

The package is TO247-3 pin Type

Manufacturer: Infineon Technologies

K50H603 pinout and Images:

K50H603 IGBT Transistor

Description

K50H603 is 600V, 50A, High Speed IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode.

1. Voltage Rating: The IGBT has a maximum voltage rating of 600 volts (V). This means it can handle a maximum voltage of 600V in its operating conditions without the risk of damage.

2. Current Rating: The IGBT has a maximum current rating of 50 amperes (A). This specifies the maximum continuous current that can flow through the IGBT without exceeding its current handling capacity.

3. High-Speed: The IGBT is characterized as high-speed, indicating it is optimized for fast switching applications. High-speed IGBTs are designed to minimize switching losses and achieve fast turn-on and turn-off times, allowing for efficient and high-frequency operation.

IGBTs are widely used in various power electronics applications, including motor drives, inverters, power supplies, and other systems requiring high-voltage and high-current control. They combine the advantages of MOSFETs (low on-resistance and fast switching) and bipolar transistors (high voltage handling) to provide efficient power switching and amplification.

Features

• very low VCEsat

• low EMI

• Very soft, fast recovery anti-parallel diode

• maximum junction temperature 175°C

• qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

K50H603 pdf datasheet

 

Applications:

• uninterruptible power supplies

• welding converters

• converters with high switching frequency

 

K50H603 PDF Datasheet