igbt

IRG4PC50W Datasheet PDF – 600V, 55A, IGBT, Transistor

Posted on by pinout

Part Number: IRG4PC50W

Function: 600V, 55A, Insulated Gate Bipolar Transistor

Package: TO-247AC Type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

Image and Pinouts:

IRG4PC50W datasheet

Description

This is 600V, 55A, insulated-gate bipolar transistor.

 

Features

1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction)applications

2. Industry-benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Benefits :

1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz(“hard switched” mode)

2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz)

Other data sheets are available within the file:  IRG4PC50, IRG4PC50WPBF

IRG4PC50W Datasheet PDF Download


IRG4PC50W pdf

H15R1202 Datasheet – 1200V, 15A, IGBT, Transistor

Posted on by pinout

Part Number: IHW15N120R2, Marking : H15R1202

Function: 1200V, 15A, IGBT with monolithic body diode

Package: TO-247 type

Manufacturer: Infineon Technologies

Image and Pinouts:

H15R1202 datasheet

 

Description

This is Vce = 1200V, Ic = 15A, Reverse Conducting IGBT.

Features

1. Powerful monolithic Body Diode with very low forward voltage

2. Body diode clamps negative voltages

3. Trench and Fieldstop technology for 1200 V applications offers :
(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behavior

4. Low EMI

5. Qualified according to JEDEC1 for target applications

6. Pb-free lead plating; RoHS compliant

7. Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 30 A

4. Power dissipation : Ptot = 357 W

5. Storage temperature: Tstg = -55 to +1575 °C

 

 

Applications:

1. Inductive Cooking

2. Soft Switching Applications

Other data sheets are available within the file: IHW15N120R2

 

H15R1202 Datasheet PDF Download


H15R1202 pdf