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Description

VLA500K-01R is a hybrid integrated circuit designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated DC-to-DC converter.

The gate driver provides an over-current protection function based on desaturation detection.

Features

1. Built-in Isolated DC-to-DC Converter for Gate Drive

2. SIP Outline Allows More Space on Mounting Area

3. Built-in Short-Circuit Protection (With Fault Output)

4. Variable Fall Time on Short Circuit Protection

5. Electrical Isolation Voltage

6. Between Input and Output (4000 Vrms for 1 Minute)

7. TTL Compatible Input

Application:

To drive IGBT modules for inverter or AC servo systems applications

Recommended IGBT Modules :

1. 600V module up to 600A

2. 1200V module up to 1400A

3. 1700V module up tp 1000A

Part Number: IRG4PC50SPBF, IRG4PC50S

Function: 600V, 70A, IGBT, Transistor

Package: TO-247AC type

Manufacturer: International Rectifier

Image and Pinouts:

IRG4PC50SPBF datasheet

Description

The IRG4PC50SPBF is 600V, 70A, Standard Speed IGBT.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

The IGBT has several advantages over traditional power semiconductors, such as bipolar transistors and MOSFETs, making it a popular choice for high-power applications. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Features

1. Standard : Optimized for minimum saturation volatage and low operationg frequencies(<1kHz)

2. Industry standard TO-247AC package

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 70 A (Tc = 25°C)

4. Collector dissipation : Pc = 200 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file:

IRG4PC50, IRG4PC50-SPBF

igbt

VLA500K-01R Datasheet PDF – IGBT Gate Driver

Description

Features

VLA500K-01R Datasheet PDF Download

IRG4PC50SPBF Datasheet – 600V, 70A, IGBT, Transistor

Description

Features

IRG4PC50SPBF Datasheet PDF Download

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