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RJP63K2DPP-M0 Datasheet PDF – 630V, 35A, N-Ch, IGBT

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Part Number: RJP63K2DPP-M0

Function: 630V, Silicon N-Channel IGBT

Package: TO-220FL type

Manufacturer: Renesas Electronics

Image and Pinouts:

RJP63K2DPP-M0 datasheet

 

Description

This is 630V, 35A, Silicon N-Channel IGBT.

 

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ

3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.

4. Low leak current: ICES= 1 μA max

5. Isolated package TO-220FL

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 630 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 25 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Applications:

1. High Speed Power Switching

 

RJP63K2DPP-M0 Datasheet PDF Download


RJP63K2DPP-M0 pdf

Other data sheets are available within the file: RJP63K2, RJP63K2DPP

K40T120 Datasheet PDF – 1200V, 40A, IGBT, IKW40T120 – Infineon

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Part Number: K40T120

Function: 1200V, 40A, IGBT

Package: TO-247 Pin Type

Manufacturer: Infineon Technologies

Images:

K40T120 datasheet

Description

The K40T120 is 1200V, 40A, IGBT. The IGBT is insulated-gate bipolar transistor.

The hard-switching TRENCHSTOP IGBT co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept.

The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Pinout:

K40T120 pinout igbt

Features

1. Lowest VCEsat drop for lower conduction losses

2. Low switching losses

3. Easy parallel switching capability due to positive temperature coefficient in VCEsat

4. Very soft, fast recovery anti-parallel Emitter Controlled HE diode

5. High ruggedness, temperature stable behavior

6. Low EMI emissions

7. Low gate charge

8. Very tight parameter distribution

Applications:

1. Highest efficiency – low conduction and switching losses

2. Comprehensive portfolio in 600 V and 1200 V for flexibility of design

3. High device reliability

Other data sheets are available within the file: IKW40T120

K40T120 Datasheet PDF


 

K40T120 pdf

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