Serial flash memory is a type of non-volatile memory that is commonly used for storing data in embedded systems, microcontrollers, and other electronic devices. It is called “serial” because data is read from and written to the memory one bit at a time or in a serial fashion, as opposed to parallel flash memory where data is transferred in parallel over multiple data lines.

Part Number: Pm25LQ032C

Function: 32Mbit Single Operating Voltage Serial Flash Memory

Package: SOIC, WSON 8 Pin

Manufacturer: Chingis Technology

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Description

The Pm25LQ032C are 32 Mbit Serial Peripheral Interface (SPI) Flash memories, providing single-, dual or quad-output. The devices are designed to support a 33 MHz fclock rate in normal read mode, and 104 MHz in fast read (Quad output is 100MHz), the fastest in the industry. The devices use a single low voltage power supply, ranging from 2.7 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers.

Features

1. Single Power Supply Operation :  Low voltage range: 2.7 V – 3.6 V

2. Memory Organization – Pm25LQ032 : 4096K x 8 (32 Mbit)

3. Serial Peripheral Interface (SPI) Compatible

(1) Supports single-, dual- or quad-output

(2) Supports SPI Modes 0 and 3

(3) Maximum 33 MHz clock rate for normal read

(4) Maximum 104 MHz clock rate for fast read

 

The devices are designed to interface directly with the synchronous Serial Peripheral Interface
(SPI) of the Motorola MC68HCxx series of microcontrollers or any SPI interface-equipped system controllers.

 

Pm25LQ032C PDF Datasheet

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NAND flash memory is a type of non-volatile storage technology that is widely used in electronic devices for data storage, such as smartphones, solid-state drives (SSDs), USB drives, memory cards, and more. It is a key component in modern digital devices due to its high storage capacity, fast read and write speeds, and durability.

Part Number: 29F64G08CBAAA, MT29F64G0BAAA

Function: 64Gb, NAND Flash Memory

Package: 48-pin TSOP Type

Manufacturer: Micron

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Description

29F64G08CBAAA is 64Gb, NAND Flash Memory. Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

Features

• Open NAND Flash Interface (ONFI) 2.2-compliant1

• Multiple-level cell (MLC) technology

• Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 256 pages (2048K + 112K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 64Gb: 4096 blocks; 128Gb: 8192 blocks; 256Gb: 16,384 blocks; 512Gb: 32,786 blocks

• Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s

• Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) • Array performance – Read page: 50µs (MAX) – Program page: 1300µs (TYP) – Erase block: 3ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol

• RESET (FFh) required as first command after poweron

• Operation status byte provides software method for detecting

• Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface

• Copyback operations supported within the plane from which data is read

Pinouts:

Types of NAND Flash:

1. Single-Level Cell (SLC): Stores one bit per cell, offering high performance and endurance. Often used in industrial and enterprise applications.

2. Multi-Level Cell (MLC): Stores multiple bits per cell, providing higher capacity at a lower cost than SLC. Used in a range of consumer and enterprise devices.

3. Triple-Level Cell (TLC): Stores three bits per cell, offering even higher capacity but with slightly reduced endurance compared to MLC.

4. Quad-Level Cell (QLC): Stores four bits per cell, further increasing capacity but potentially impacting endurance and performance.

29F64G08CBAAA PDF Datasheet