memory archives - Page 126 of 262

Part Number: M29W400B

Function: 4 MBIT, Low Voltage Single Supply Flash Memory

Package: SO 44 pin, TSOP 48 pin, FBGA48 pin Type

Pinouts:

M29W400B datasheet

Description

The M29W400B is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Word by-Wordbasis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles. Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a CommandInterfaceusing standard microprocessor write timings.

The device is offered in TSOP48 (12 x 20mm),SO44 and FBGA48 (8 x 6 balls, 0.8mm pitch) packages. Both normal and reverse pinouts are available for the TSOP48 package.

Features

1. 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATION

2. FAST ACCESS TIME: 90ns

3. FAST PROGRAMMING TIME
(1) 10µs by Byte / 16µs by Word typical

4. PROGRAM/ERASE CONTROLLER (P/E.C.)
(1) Program Byte-by-Byte or Word-by-Word
(2) Status Register bits and Ready/Busy Outpu

5. MEMORY BLOCKS
(1) Boot Block (Top or Bottom location)
(2) Parameter and Main blocks

6. BLOCK, MULTI-BLOCK and CHIP ERASE

7. MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

8. ERASE SUSPEND and RESUME MODES
(1) Read and Program another Block during Erase Suspend

9. LOW POWER CONSUMPTION
(1) Stand-by and Automatic Stand-by

10. 100,000 PROGRAM/ERASE CYCLES per BLOCK

11. 20 YEARS DATA RETENTION
(1) Defectivity below 1ppm/year

12. ELECTRONIC SIGNATURE
(1) Manufacturer Code: 0020h
(2) Device Code, M29W400T: 00EEh
(3) Device Code, M29W400B: 00EFh

Other data sheets are available within the file: M29W400, M29W400T

M29W400B Datasheet PDF Download

Description

The FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

Ordering Information

Features

1. 5V±10% SUPPLY VOLTAGE
2 12V PROGRAMMING VOLTAGE
3. FAST ACCESS TIME : 70ns
4. BYTE PROGRAMING TIME : 10µs typical
5. ELECTRICAL CHIP ERASE in 1s RANGE
6. LOW POWER CONSUMPTION – Stand-by Current: 100µA max
7. 10,000 ERASE/PROGRAM CYCLES
8. INTEGRATED ERASE/PROGRAM-STOP TIMER
9. OTP COMPATIBLE PACKAGES and PINOUTS
10. ELECTRONIC SIGNATURE
(1) Manufacturer Code: 20h
(2) Device Code: 07h

Other data sheets are available within the file: M28F101-100K1, M28F101-100K1R, M28F101-100K1TR, M28F101-100K3

memory

M29W400B Datasheet PDF – 4 Mbit Flash Memory – ST

Description

M29W400B Datasheet PDF Download

M28F101 Datasheet – 1Mb (128Kx8, Chip Erase) Flash Memory

Description

M28F101 Datasheet PDF Download

Related articles across the web