Part Number: MDD3752RH

Function: -40V, -43A, P-Channel Trench MOSFET

Package: TO-252, D-Pak Type

Manufacturer: MagnaChip

Images:

Description

The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application.

A P-channel trench MOSFET is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that operates using P-channel (positive-channel) conductivity. It is designed to handle high voltage and power levels in various electronic applications.

Features

1. VDS = -40V

2. ID = -43A @VGS = -10V

3. RDS(ON)
(1) < 17mΩ @ VGS = -10V
(2)< 25mΩ @ VGS = -4.5V

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 40 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 43 A

4. Total Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Inverters

2. General purpose applications

 

MDD3752RH PDF Datasheet

Part Number: 6R600P, IPB60R600CP

Function: 650V, 6.1A, MOSFET

Package: TO-263 Type

Manufacturer: Infineon Technologies

Images:

Description

6R600P is 650V, Cool MOSFET (Power Transistor). The term “Cool MOS” refers to a type of power transistor technology developed by Infineon Technologies, a semiconductor manufacturing company. “Cool MOS” is a brand name for their power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) that are designed to offer efficient and low-loss switching characteristics. These transistors are widely used in various applications, including power supplies, motor drives, lighting systems, and more.

Features

• Lowest figure-of-merit RON x Qg

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC1) for target applications

• Pb-free lead plating; RoHS compliant

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6R600P PDF Datasheet