MOSFET

K18A50D PDF Datasheet – 500V, 18A, MOSFET

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Part Number: K18A50D, TK18A50D

Function: 500V, 18A, MOSFET ( Field Effect Transistor )

Package: TO-220SIS Type

Manufacturer: Toshiba

Images:K18A50D pdf pinout

Description

K18A50D is 500V, 18A, Silicon N Channel MOS Type Field Effect Transistor. 

Features:

1. Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)

4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 v

3. Drain current: ID = 18 A

4. Allowable Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K18A50D datasheet

K18A50D PDF Datasheet

KF6N60D PDF Datasheet – 600V, 5A, N-Ch, MOSFET

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Part Number: KF6N60D, KF6N60I

Function: 600V, 5A, N-Ch, MOSFET

Package: DPAK Type

Manufacturer: KEC

Images:KF6N60D pdf mosfet

Description

KF6N60D is 600V, 5A, N-CHANNEL MOS FIELD EFFECT TRANSISTOR. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.

Features

1. VDSS(Min.) = 600V, ID= 5A

2. RDS(ON) = 1.4 Ω(Max) @VGS =10V

3. Qg(typ.) = 16nC

KF6N60D datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Drain Power Dissipation: Pd = 69.4 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

KF6N60D PDF Datasheet