MOSFET

DG2N60 PDF – 600V, 2A, N-Channel MOSFET ( Datasheet )

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Part Number: DG2N60

Function: 600V, 2A, N-CHANNEL ENHANCEMENT MODE MOSFET

Package: TO-251, TO-252, TO-220, TO-220F, TO-126 Type

Manufacturer: DGME ( Jiangsu Dongguang Micro-electronics )

Images:DG2N60 pdf transistor

 

Description

The DG2N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.

Features:

1. Low Crss

2. Low gate charge

3. Fast switching

4. Improved ESD capability

 

Applications:

1. High efficiency switch mode power supplies

2. Electronic lamp ballasts

3. UPS

 

DG2N60 PDF Datasheet

DG2N60 pdf

K3462 MOSFET – 250V, 3A, N-Ch, Transistor, 2SK3462 PDF

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Part Number: K3462, 2SK3462

Function: 250V, 3A, N-Channel MOSFET, Transistor

Package: SC-64 Type

Manufacturer: Toshiba Semiconductor

Images:K3462 pdf mosfet

Description

The K3462 is 250V, 3A, Silicon N-Channel MOS Type Field Effect Transistor. 

 

Features

• 4 V gate drive

• Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)

• High forward transfer admittance: |Yfs| = 2.2 S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 250 V)

• Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

K3462 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 3 A

4. Drain Power Dissipation: Pd = 20 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator, DC/DC Converter

2. Motor Drive

K3462 PDF Datasheet