5N60C PDF – 600V, 4.5A, MOSFET ( FQB5N60C, FQI5N60C )

Part Number: 5N60C, FQB5N60C, FQI5N60C

Function: 600V, 4.5A, MOSFET (Transistor)

Package: D2-PAK, I2-PAK Type

Manufacturer: Fairchild Semiconductor

Images:5N60C pdf mosfet

Description

5N60C is 600V, 4.5A, MOSFET. 

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

 

Features:

• 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V

• Low gate charge ( typical 15 nC)

• Low Crss ( typical 6.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

5N60C datasheet

Applications:

Ordering Informations : FQB5N60C / FQI5N60C QFET FQB5N60C / FQI5N60C 600V

5N60C PDF Datasheet

FQPF10N20 PDF Datasheet – 200V, 6.8A, N-Ch, MOSFET

Part Number: FQPF10N20

Function: 200V, 6.8A, N-Channel MOSFET

Package: TO-220F Type

Manufacturer: Fairchild Semiconductor

Images:FQPF10N20 pinout pdf

Description

FQPF10N20 is 200V, 6.8A, N-Channel MOSFET. The N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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Features

1. Low Gate Charge (Typ. 20 nC

2. Low Crss (Typ. 40.5 pF)

3. 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A

4. 100% Avalanche Tested

FQPF10N20 mosfet datasheet

FQPF10N20 PDF Datasheet