Part Number: MDF10N65B

Function: 650V, 10A, N-Channel MOSFET

Package: TO-220F type

Manufacturer: MagnaChip

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Description

The MDF10N65B MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDF10N65B is suitable device for SMPS, high Speed switching and general purpose applications.

Features

1. VDS = 650V

2. ID = 10.0A @ VGS = 10V

3. RDS(ON) ≤ 1.0Ω @ VGS = 10V

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Total Power Dissipation: Pd = 47.7 W

5. Avalanche energy: Ear = 15 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Power Supply

2. PFC

3. High Current, High Speed Switching

MDF10N65B PDF Datasheet

Part Number: IRL2310

Function: 100V, 40A, Power MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier

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Description

IRL2310 is 100V, 40A, Power MOSFET. HEXFET is a trademarked term used by International Rectifier (now part of Infineon Technologies) to refer to their family of power MOSFETs. HEXFET (High Efficiency eXpansion FET) is a specific type of power MOSFET that has been optimized for high-performance and high-efficiency applications.

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of application.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

HEXFET power MOSFETs are commonly used in a wide range of applications, including power supplies, motor drives, automotive electronics, industrial automation, solar inverters, and high-frequency switching applications. Due to their excellent performance and efficiency characteristics, HEXFETs have become a popular choice for power semiconductor devices in many industries.

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. Repetitive Avalanche Rated

5. Logic-Level Gate Drive

6. RDS(on) Specified at VGS= 4.5V & 10V

7. 175°C Operating Temperature

IRL2310 PDF Datasheet