Part Number: MDF4N60B

Function: 600V, 4.6A, N-Channel Trench MOSFET

Package: TO-220F Type

Manufacturer: MagnaChip

Images:

Description

MDF4N60B is 600V, 4.6A, N-Ch, MOSFET. 

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

1. VDS = 600V

2. ID = 4.6A

3. RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 4.6 A

4. Total Power Dissipation: Pd = 34.7 W

5. Avalanche energy: Ear = 9.25 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Power Supply

2. PFC

3. High Current, High Speed Switching

MDF4N60B PDF Datasheet

Part Number: FQPF10N20C

Function: 200V N-Channel MOSFET

Package: TO-220, TO-220F Type

Manufacturer: Fairchild Semiconductor

Images:

Description

FQPF10N20C is 200V N-Channel MOSFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

Features

• 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V

• Low gate charge ( typical 20 nC)

• Low Crss ( typical 40.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

[…]

Applications:

FQPF10N20C PDF Datasheet