Part Number: SVF740F, SVF740T

Function: 400V, 10A, N-CHANNEL MOSFET

Package: TO-220F-3L, TO-220-3L Type

Manufacturer: Silan Microelectronics

Images:

Description

This is 10A, 400V N-CHANNEL MOSFET. SVF740T / SVF740F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

Features

1. 10A, 400V, RDS(on)(typ)=0.45 Ω@VGS=10V

2. Low gate charge

3. Low Crss

4. Fast switching

5.. Improved dv/dt capability

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 400 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 10 A

4. Channel temperature : Tch = 150 °C

5. Storage temperature : Tstg = -55 to +150 °C

SVF740F PDF Datasheet

Part Number: P6N60FI, STP6N60FI

Function: 600V, 3.8A, N-Channel MOSFET

Package: ISOWATT 220 Type

Manufacturer: ST Microelectronics

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Description

P6N60FI is 600V, 3.8A, N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR.

Features :

1. TYPICAL RDS(on) = 1 Ω

2. AVALANCHE RUGGED TECHNOLOGY

3. 100% AVALANCHE TESTED

4. REPETITIVE AVALANCHE DATA AT 100°C

5. APPLICATION ORIENTED CHARACTERIZATION

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 3.8 A

4. Total Power Dissipation: Ptot = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SWITCH MODE POWER SUPPLIES (SMPS)

3. CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL

4. LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT

P6N60FI Datasheet PDF