80NF03L-04 PDF – 30V, 80A, N-Ch, MOSFET – STP80NF03L-04

Part Number: 80NF03L-04, STP80NF03L-04

Function: N-Channel, 30V, 80A, MOSFET

Package: D2PAK Type

Manufacturer: STMicroelectronics

Images:80NF03L-04 pdf pinout

Description

80NF03L-04 is N-CHANNEL 30V – 0.0035 Ω – 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET.

This Power MOSFET is the latest development of STMicroelectronis unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features:

1. TYPICAL RDS(on) = 0.0035Ω

2. EXCEPTIONAL dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. LOW THRESHOLD DRIVE

80NF03L-04 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C):

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 80 A

4. Total Dissipation: Ptot = 300 W

5. Channel temperature : Tch = 175 °C

6. Storage temperature : Tstg = -60 to +175 °C

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. MOTOR CONTROL, AUDIO AMPLIFIERS

3. DC-DC & DC-AC CONVERTERS

4. AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

80NF03L-04 PDF Datasheet

GFP60N03 PDF – 30V, 60A, N-Ch, MOSFET ( Datasheet )

Part Number: GFP60N03

Function: 30V, 60A, N-Channel Enhancement-Mode MOSFET

Package: TO-220AB Type

Manufacturer: General Semiconductor

Images:GFP60N03 pdf pinout

Description

The GFP60N03 is 30V, 60A, N-Channel Enhancement-Mode MOSFET.

Features

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low On-Resistance

• Specially Designed for Low Voltage DC/DC Converters

• Fast Switching for High Efficiency

Mechanical Data :

1. Case : JEDEC TO-220AB molded plastic body

2. Terminals : Leads solderable per MIL-STD-750, Method 2026

3. High temperature soldering guaranteed : 250°C/10 seconds at terminals

4. Mounting Torque : 10 in-lbs maximum

5. Weight : 2.0g

GFP60N03 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 60 A

4. Maximum Power Dissipation: Pd = 62.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

GFP60N03 PDF Datasheet