MOSFET

7N60 PDF Datasheet – 600V, 7A, N-Ch, MOSFET ( Transistor )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 7N60

Function: 7A, 600V, N-CHANNEL MOSFET

Package: TO-220AB, TO-263

Manufacturer: CHONGQING PINGYANG

Images:7N60 pdf pinout

Description

This is 7A mps, 600 Volts N-CHANNEL MOSFET. The 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts.

Features:

1. 7A, 600V, RDS(ON)=1.2Ω@VGS=10V/3.5A

2. Low gate charge

3. Low Ciss

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

Package Informations :

(1) TO-220AB 7N60
(2) ITO-220AB 7N60F
(3) TO-263 7N60B
(4) TO-262 7N60H

7N60 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7 A

4. Single pulse avalanche energy : Eas = 550 mJ

5. Avalanche curren : Iar = 7 A

7. Repetitive avalanche energy : Ear = 54 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

[…]

 

7N60 Datasheet PDF

7N60 pdf

Related articles across the web

10N60C PDF Datasheet – 600V, 9.5A, N-Ch, MOSFET – FQP10N60C

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 10N60C, FQP10N60C

Function: 600V, 9.5A, N-Channel MOSFET

Package: TO-220, TO-220F type

Manufacturer: Fairchild Semiconductor ( https://www.onsemi.com/ )

Image

10N60C transistor mosfet

 

Description

The 10N60C is 600V, 9.5A, N-Channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

 

Features

1. 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V

2. Low gate charge ( typical 44 nC)

3. Low Crss ( typical 18 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

 

Pinout

10N60C transistor pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9.5 A

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

 

10N60C PDF Datasheet