P75N02LDG PDF – N-Ch, 25V, 75A, MOSFET (Transistor)

This post explains for the MOSFET.

The Part Number is P75N02LDG.

The Package is TO-252 Type.

The function of this transistor is N-Channel MOSFET (25V, 75A).

Manufacturer: UNIKC Semiconductor

Images:

P75N02LDG transistor mosfet

Description

The P75N02LDG is N-Channel Enhancement Mode MOSFET.

P75N02LDG pinout datasheet

 

PRODUCT SUMMARY

1. V(BR)DSS RDS(ON) 25V 5mΩ @VGS = 10V ID 75A TO-252

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 75 50 170 Avalanche Current IAS 45 Avalanche Energy L = 0.1mH EAS 100 Power Dissipation TC = 25 °C TC = 100 °C PD 54 32.75 Operating Junction & Storage Temperature Range Lead Temperature (1/16″ from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA RqCS TYPICAL 0.6 MAXIMUM 2.3 62.5 UNITS °C / W Ver 1.1 1 2013-3-13 P75N02LDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C Unless Otherwise Noted) PARAMETER SYMBOL TEST CO […]

Absolute Maximum Ratings (Tc = 25°C)

1. Gate to source voltage : VGS = ± 20 V
2. Drain current: ID =  75 A
3. Drain power dissipation : PD = 54 W
4. Single pulse avalanche energy : Eas = 100 mJ
5. Channel temperature: Tch = -55 to +150 °C
6. Storage temperature: Tstg = -55 to +150 °C

 

P75N02LDG PDF Datasheet

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IRF1704 PDF – Power MOSFET (Vdss=40V / Id=170A)

Part Number: IRF1704

Function: Power MOSFET (Vdss=40V /  Rds(on)=0.004ohm /  Id=170A )

Package: TO-220AB Type

Manufacturer: International Rectifier

Images:IRF1704 PDF

Description

The IRF1704 is 40V, 170A, MOSFET. Specifically designed for Automotive applications, this HEXFET power MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are fast switching speed and improved repetitive avalanche rating. The continuing technology leadership of Internationl Rectifier provides 200°C operating temperature in a plastic package. At high ambient temperatures, the IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices in the same package outline. This makes this part ideal for existing and emerging under-the-hood automotive applications such as Electric Power Steering (EPS), Fuel / Water Pump Control and wide variety of other applications. […]

IRF1704 datasheet

Features:

1. 200°C Operaing Temperature

2. Advanced Process Technology

3. Ultra Low On-Resistance

4. Dynamic dv/dt Rating

5. Fast Switching

6. Repetitive Avalanche Allowed up to Tj Max

IRF1704 PDF Datasheet